Skip to main content Accessibility help
×
Home

Reactive Ion Beam Assisted Evaporation of Tin Films for Use as Diffusion Barriers in GaAs MMICs

  • T. E. Kazior (a1) and R. C. Brooks (a1)

Abstract

We report on the development of an evaporated diffusion barrier for incorporation into the metallizations currently used in GaAs MMICs. Results indicated that TiN films formed by reactive ion beam assisted evaporation - the simultaneous evaporation of metal atoms and bombardment with reactive ions - were as stable as TiN films formed by reactive sputter deposition and far superior to films formed by reactive evaporation. In addition the formation of these films is compatible with photoresist lift-off techniques. Chemical and electrical analysis has shown that these films are effective barriers against Au, Ga and As diffusion under extensive (up to 1500 hrs) elevated temperature storage (280°C). TiN-Au gate electrodes whose electrical characteristics are comparable to conventional Ti-Pt-Au gates have also been fabricated.

Copyright

References

Hide All
1) see, for example, Wittmer, M., J. Vac. Sci. Technol. A3(4), 1797 (1985).
2) Ting, C. Y., J. Vac. Sci. Technol. 21, 14 (1982);
Thin Solid Films 119, 11 (1984).
3) Waldrop, J. R., Appl. Phys. Lett. 43, 87 (1983).
4) Zhang, L. C., Cheung, S. K., Liang, C. L., and Cheung, N. W., Appl. Phys. Lett. 50, 445 (1987).
5) Zhang, L. C., Liang, C. L., Cheung, S. K., and Cheung, N. W., J. Vac. Sci. Technol.. B5(6), 1716 (1987).
6) Ding, J., Lillental-Weber, Z., Weber, E. R., Washburn, J., Fourkas, R. M., and Cheung, N. W., Appl. Phys. Lett. 52, 2160 (1988).
7) Zhu, M. F., Hamdi, A. H., Nicolet, M-A., and Tandon, J. L., Thin Solid Films 119, 5 (1984).
8) Remba, R. D., Suni, I., and Nicolet, M-A., IEEE Electron Device Lett. 6, 437 (1985).
9) Repeta, M., Dignard-Bailey, L., Currie, J. F., Brebner, J. L., and Barla, K., J. Appl. Phys. 63, 2769 (1988).
10) Jackson, G. S., Tong, E., Saledas, P., Kazior, T. E. and Brooks, R. C., presented at the 1990 MRS Spring Meeting, San Francisco, CA.

Reactive Ion Beam Assisted Evaporation of Tin Films for Use as Diffusion Barriers in GaAs MMICs

  • T. E. Kazior (a1) and R. C. Brooks (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed