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Reactive Ion Beam Assisted Evaporation of Tin Films for Use as Diffusion Barriers in GaAs MMICs

Published online by Cambridge University Press:  25 February 2011

T. E. Kazior  and
R. C. Brooks
T. E. Kazior
Affiliation:
Raytheon Company, Research Division, 131 Spring St., Lexington, Ma. 02173
R. C. Brooks
Affiliation:
Raytheon Company, Research Division, 131 Spring St., Lexington, Ma. 02173
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Abstract

We report on the development of an evaporated diffusion barrier for incorporation into the metallizations currently used in GaAs MMICs. Results indicated that TiN films formed by reactive ion beam assisted evaporation - the simultaneous evaporation of metal atoms and bombardment with reactive ions - were as stable as TiN films formed by reactive sputter deposition and far superior to films formed by reactive evaporation. In addition the formation of these films is compatible with photoresist lift-off techniques. Chemical and electrical analysis has shown that these films are effective barriers against Au, Ga and As diffusion under extensive (up to 1500 hrs) elevated temperature storage (280°C). TiN-Au gate electrodes whose electrical characteristics are comparable to conventional Ti-Pt-Au gates have also been fabricated.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 511
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1) see, for example, Wittmer, M., J. Vac. Sci. Technol. A3(4), 1797 (1985).Google Scholar
2) Ting, C. Y., J. Vac. Sci. Technol. 21, 14 (1982);CrossRefGoogle Scholar
Thin Solid Films 119, 11 (1984).CrossRefGoogle Scholar
3) Waldrop, J. R., Appl. Phys. Lett. 43, 87 (1983).Google Scholar
4) Zhang, L. C., Cheung, S. K., Liang, C. L., and Cheung, N. W., Appl. Phys. Lett. 50, 445 (1987).Google Scholar
5) Zhang, L. C., Liang, C. L., Cheung, S. K., and Cheung, N. W., J. Vac. Sci. Technol.. B5(6), 1716 (1987).Google Scholar
6) Ding, J., Lillental-Weber, Z., Weber, E. R., Washburn, J., Fourkas, R. M., and Cheung, N. W., Appl. Phys. Lett. 52, 2160 (1988).Google Scholar
7) Zhu, M. F., Hamdi, A. H., Nicolet, M-A., and Tandon, J. L., Thin Solid Films 119, 5 (1984).CrossRefGoogle Scholar
8) Remba, R. D., Suni, I., and Nicolet, M-A., IEEE Electron Device Lett. 6, 437 (1985).Google Scholar
9) Repeta, M., Dignard-Bailey, L., Currie, J. F., Brebner, J. L., and Barla, K., J. Appl. Phys. 63, 2769 (1988).CrossRefGoogle Scholar
10) Jackson, G. S., Tong, E., Saledas, P., Kazior, T. E. and Brooks, R. C., presented at the 1990 MRS Spring Meeting, San Francisco, CA.Google Scholar