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Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures

Published online by Cambridge University Press:  10 February 2011

S. J. Pearton ,
S. Bendi ,
K. S. Jones ,
V. Krishnamoorthy ,
R. G. Wilson ,
F. Ren ,
R. F. Karlicek Jr  and
R. A. Stall
V. Krishnamoorthy
Affiliation:
University of Florida, Gainesville, FL 32611
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. A. Stall
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
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Abstract

The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150°C higher than N2. The dissociation of Mg-H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ≤700°C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900°C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in a GaN/InGaN double heterostructure. The addition of an accelerating potential for 2H+ ions in the plasma did not greatly affect the deuterium profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 993
Copyright
Copyright © Materials Research Society 1997

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References

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