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Reaction Growth and Morphology of An Aluminide Compound in Al-Cu/Ti-W Bilayers

Published online by Cambridge University Press:  25 February 2011

M. Park ,
S. J. Krause  and
S. R. Wilson
M. Park
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe AZ 85287
S. J. Krause
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe AZ 85287
S. R. Wilson
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe AZ 85287
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Abstract

The effect of copper content on the reaction growth and morphology of Al12W in Al-Cu/Ti-W bilayers was studied with plan view and cross-section transmission electron microscopy. After heat treatment at 450°C for 30 minutes, a spiked growth of A112W penetrated into the grain boundaries of Al-0.5 wt.% Cu film by the reaction of Al with the Ti-W sublayer. Increasing copper addition from 0.5 to 1.5% inhibited the spiked growth of AI12W, resulting in a flat and planar layer (-150Å) of Al12W. It is suggested that increasing copper segregation in the aluminum grain boundaries during heat treatment at 450°C causes a significant change in the growth morphology of the Al12W compound.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 799
Copyright
Copyright © Materials Research Society 1992

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References

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