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REACE: A New Algorithm for Low Energy Ion Implantation Simulation.

  • Xiaokang Shi (a1), Min Yu (a1), Hao Shi (a1), Ru Huang (a1), Xing Zhang (a1), Yangyuan Wang (a1) and Jinyu Zhang (a2)...

Abstract

A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into crystalline targets is presented, named REACE (Rare Event Algorithm with Cascade Effect). This method can speed up the MD simulation of ion implantation with cascade processes. As a result, the time required to perform a simulation with high precision and dose effect is drastically reduced. And many details producing statistical noise in the simulation are simulated in the REACE and help it to be more reasonable and reliable.

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1. Peltola, J., Nordlund, K. and Keinonen, J., Nucl. Instr. Meth. Phys. Res. B 195, 269 (2002)
2. Min, Yu, Ru, Huang, Xing, Zhang, Yangyuan, Wang and Hideki, Oka, SISPAD, Japan,(Sep. 2002)
3. Keith M., Beardmore and Niels, Gronbech-Jensen, Phys. Rev. B Vol. 57 No. 6, pp. 72787287 (1998)
4. Klein, K. M., Park, C., and Tasch, A. F., “Monte Carlo simulation of boron implantation into sigle-crystal silicon”, IEEE Trans. Electron Devices, Vol. 39, pp. 16141621, 1992
5. Bohmayr, W., Burekov, A., Lorenz, J., Ryssel, H., and Selberherr, S., “Trajectory Split Method for Monte Carlo Simulation of Ion Implantation”, IEEE Trans. Semicondutor Manufacturing, Vol. 8, No. 4, pp. 402407, 1995
6. Phillips, A. and Price, P. J., “Monte Carlo calculations on hot electron energy tails,” Appl. Phys. Lett., Vol. 30, No. 10, 1977
7. Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Matter, (Pergamon, New York, 1985)
8. David, Cai, Niels, Gronbech-Jensen, Charles M., Snell and Keith M., Beardmore, “Phenomenological electronic stopping-power for molecular dynamics and Monte Carlo simulation of ion implantation into silicon”, Phys. Rev. B Vol. 54 No. 23, pp. 1714717157 (1996)
9. David, Cai, Charles M., Snell, Keith M., Beardmore and Niels, Gronbech-Jensen, “Simulation of phosphorous implantation into silicon with a single parameter electronic stopping power model”, Int. J. Mod. Phys. C 9, 459 (1998)

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