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Rapid Thermal Oxidation of Polysilicon and Silicon

Published online by Cambridge University Press:  28 February 2011

Jaim Nulman
Jaim Nulman*
Affiliation:
AG Assocaites, 1325 Borregas Ave., Sunnyvale, CA 94089
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Abstract

Growth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 641
Copyright
Copyright © Materials Research Society 1987

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References

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