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Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon

Published online by Cambridge University Press:  03 September 2012

G. M. Berezina ,
F. P. Kdrshunov ,
N. A. Sobolev ,
A. V. Voevodova  and
A. A. Stuk
G. M. Berezina
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ui. P. Brovki 17, Rep. of Belarus
F. P. Kdrshunov
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ui. P. Brovki 17, Rep. of Belarus
N. A. Sobolev
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ui. P. Brovki 17, Rep. of Belarus
A. V. Voevodova
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ui. P. Brovki 17, Rep. of Belarus
A. A. Stuk
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ui. P. Brovki 17, Rep. of Belarus
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Abstract

The influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 731
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Mordkovich, V. N., Solov'yov, S. P., Temper, E.M., Kharchenko, V.A., Fiz. tekhn. poluprovodn. 8, 210 (1974).Google Scholar
2. Korshunov, F. P., Sobolev, N. A., Sheraukhov, V. A., Zh. prikl. spektroskopii [Sov. J. Appl. Spectrosoopy]. 51. 248 (1989).Google Scholar
3. Korshunov, F. P., Sobolev, N. A., Sheraukhov, V. A. et. al., Fiz. tekhn. poluprovodn. 11 1968 (1987).Google Scholar
4. Glairon, P. J., Meese, J. N., in Neutron Transmutation Doping in Semicond. (N.Y. - London, 1979) pp. 291–305.CrossRefGoogle Scholar
5. See e.g. Wagner, P., Hage, J., Appl. Phys. A49, 123 (1989).CrossRefGoogle Scholar
6. Markevich, V. P., Morin, L. I., Fiz. tekhn. poluprovodn. 25, 1737 (1991).Google Scholar
7. Dmitrenko, N. N., Qgnenskii, A. I.. Fiz. tekhn. poluprovodn. 22. 1769 (1988).Google Scholar
8. Gapper, P., Jones, A. W., Wallhouse, E. J., Wilkes, J.G., J. Appl. Phys. 48, 1646 (1977).Google Scholar
9. Babitskii, Yu. M., Grlnshtein, P. M., Orlova, E. V., Electronnaya Tekhnika. Ser. 6. Materialy. No. 2, 33 (1982).Google Scholar