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Rapid Thermal Annealing of GaAs Films on (001) Si Substrate Grown by Solid Phase Epitaxy Technique

Published online by Cambridge University Press:  25 February 2011

W.K. Choo ,
K.I. Cho ,
J.Y. Lee ,
S.C. Park  and
O.J. Kwon
W.K. Choo
Affiliation:
Korea Advanced Institute of Science and Technology, Seoul 130–650
K.I. Cho
Affiliation:
Korea Advanced Institute of Science and Technology, Seoul 130–650 Electronics and Telecommunications Research Institute, Daejeon 305–606, Korea
J.Y. Lee
Affiliation:
Korea Advanced Institute of Science and Technology, Seoul 130–650
S.C. Park
Affiliation:
Electronics and Telecommunications Research Institute, Daejeon 305–606, Korea
O.J. Kwon
Affiliation:
Electronics and Telecommunications Research Institute, Daejeon 305–606, Korea
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Abstract

GaAs layers grown by solid phase epitaxy on (001) Si substrate were subjected to post-growth rapid thermal anneal (RTA) at 700, 800, and 900°C for 10s in a N2 atmosphere. Rutherford backscattering/channeling showed a substantial improvement in crystalline quality of GaAs epilayer after RTA at 800°C. After RTA at 900°C for 10s, stacking faults (and/or microtwins) were eliminated entirely, and the dislocation densities in both the interface region and the film interior were reduced. High-resolution transmission electron micrographs showed a significant change in misfit dislocation structure at the interface after RTA; namely, the 90° pure edge and 60° misfit dislocations were transformed to an evenly distributed array of 90° dislocations at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 473
Copyright
Copyright © Materials Research Society 1991

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References

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