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Rapid Thermal Annealing in III-V Compounds

  • D. Eirug Davies (a1)

Abstract

Progress in applying rapid thermal annealing for activating implants is surveyed. Advantages to be gained through curtailing substrate semiinsulating loss, enhancing heavy n-type activation, and in reducing the diffusive redistribution of p-type implants are discussed in detail. Consideration is given to encapsulation requirements and the role of stoichiometry in activation. While the emphasis is on GaAs, work on InP and InGaAs has also been included.

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Rapid Thermal Annealing in III-V Compounds

  • D. Eirug Davies (a1)

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