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Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

Published online by Cambridge University Press:  26 February 2011

B.J. Skromme ,
N.G. Stoffel ,
A.S. Gozdz ,
M.C. Tamargo  and
S.M. Shibli
B.J. Skromme
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank NJ 07701
N.G. Stoffel
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank NJ 07701
A.S. Gozdz
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank NJ 07701
M.C. Tamargo
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank NJ 07701
S.M. Shibli
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank NJ 07701
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Abstract

We describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 391
Copyright
Copyright © Materials Research Society 1989

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References

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