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Rapid Thermal Anneal and Furnace Anneal of Silicon and Beryimlum Implanted Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

A.T. Yuen ,
S.I. Long  and
J.L. Merz
A.T. Yuen
Affiliation:
Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106
S.I. Long
Affiliation:
Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106
J.L. Merz
Affiliation:
Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

A comparison has been made between rapid thermal annealing (RTA) and furnace annealing (FA) of implanted GaAs. Hall measurements showed consistently higher electrical activation of n-type (Si-5E12 cm −2) implants with FA and higher electrical activation of p-type (Be-1E14 cm −2) implants with RTA. Photoluminescence (PL) revealed that for RTA temperatures above 950°C some of the Si was going onto As, acceptor sites, thus reducing the net donor concentration. PL for RTA below 950°C showed signs of incomplete recrystallization. By a technique of “dual implantation” of As and Si into GaAs we were able to force the Si onto Ga-sites resulting in a higher donor concentration after RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 285
Copyright
Copyright © Materials Research Society 1985

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References

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