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Rapid Photoluminescence Intensity Degradation in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

P. Basmaji ,
A. A. Bernussi ,
J. C. Rossi  and
B. Matvienko
P. Basmaji
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
A. A. Bernussi
Affiliation:
CPqD - Telebras - 13085 - Campinas - SP -, Brazil
J. C. Rossi
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
B. Matvienko
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
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Abstract

Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 233
Copyright
Copyright © Materials Research Society 1993

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References

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