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Rapid Isothermal Processing of Strained GeSi Layers

  • D. K. Nayak (a1), K. Kamjoo (a1), J. S. Park (a1), J. C. S. Woo (a1) and K. L. Wang (a1)...

Abstract

The effects of high temperature-time thermal cycles on the structural stability of GexSi1−x/Si and Si/GexSi1−x/Si layers are studied, using double-crystal x-ray diffraction. The temperature-time cycles chosen in this study are useful for the fabrication of submicron Si MOSFETs. The electrical characteristics of GeSi/Si p-n heterojunctions as a function of annealing temperature and time are also presented.

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Rapid Isothermal Processing of Strained GeSi Layers

  • D. K. Nayak (a1), K. Kamjoo (a1), J. S. Park (a1), J. C. S. Woo (a1) and K. L. Wang (a1)...

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