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Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of Siox Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

A. Feingold ,
A. Katz ,
S. J. Pearton ,
U. K. Chakrabartl  and
K. S. Jones
A. Feingold
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–0636
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–0636
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–0636
U. K. Chakrabartl
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–0636
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL
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Abstract

High quality SiOx films were deposited onto InP substrates in the temperature range of 350 to 550°C and pressure range of 5 to 15 Torr. Depositions were made by means of rapid thermal low pressure chemical vapor deposition (RT-LPCVD) using oxygen (O2) and 2% diluted silane (SiH4) in argon (Ar) gas sources, with O2:SiH4 gas ratio of 5:1 to 50:1. High deposition rates of 15–50 nm/sec were obtained, providing uniform SiOx layers, with low stresses of −5×109 to −2×109 dyne-cm−2, and thermal stability on post deposition temperatures up to 1000°C. The SiOx films had refractive indexes between 1.44 and 1.50, densities of 2.25 to 2.37grcm−3 and exhibited wet etch rates of 0.2 to 0.8 nmsec.−1 through standard p-etch process. The influence of the various process parameters on the SiOx film properties was examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 425
Copyright
Copyright © Materials Research Society 1992

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References

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