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Rapid Annealing of Rie-Induced Damage in GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

S. J. Pearton ,
W. S. Hobson ,
U. K. Chakrabarti ,
K. T. Short ,
A. E. White  and
K. S. Jones
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
U. K. Chakrabarti
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

Ion bombardment of the surface during CCI2 F2:O2 or C2 H6:H2 :Ar reactive ion etching of GaAs and AlGaAs can produce a heavily disordered near-surface (∼1000A for 380V self-bias on the cathode in a parallel plate reactor) region. The damage in this layer causes carrier depletion effects due to trapping of deep level defects. We have investigated the in-situ and post-RIE annealing of both the structural disorder and the electrical effects of the damage using TEM, ion channelling, C-V and I-V measurements. Etching at 400°C reduced the RIE-induced damage due to dynamic annealing processes. Carrier reductions of approximately an order of magnitude were observed immediately after etching GaAs and AIGaAs in C2H6:H2:Ar; much smaller changes (∼20%) were observed using CCI2F2:O2. For both gas chemistries annealing in the range 200–300°C produced the most ideal I-V characteristics in GaAs, whereas 300–400°C was required for AIGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 399
Copyright
Copyright © Materials Research Society 1989

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References

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