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Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

Published online by Cambridge University Press:  15 February 2011

D. B. Thomson ,
T. Gehrke ,
K. J. Linthicum ,
P. Rajagopal  and
R. F. Davis
D. B. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907
P. Rajagopal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907
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Abstract

Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route has advantages over conventional lateral epitaxial overgrowth (LEO) techniques. In this research, pendeo-epitaxial growth of GaN films has been achieved on elongated GaN seed columns. The seed columns were etched from GaN grown on 6H-SiC (0001) substrates via metalorganic vapor phase epitaxy (MOVPE). Silicon nitride mask layers atop the GaN seed columns forced growth from the sidewalls. Pendeo-epitaxial growth of GaN was investigated using several growth temperatures. Higher growth temperatures resulted in improved coalescence due to greater lateral to vertical growth ratios.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.37
Copyright
Copyright © Materials Research Society 1999

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