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Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H

  • M. E. Savage (a1), U. JaYamaha (a1), A. Compaan (a1), A. Aydinli (a2) and Dashen Shen (a3)...

Abstract

Extremely heavily doped polycrystalline silicon films were prepared by multiple-pulse XeCl excimer laser annealing of hydrogenated amorphous silicon films. The as-grown films used here included five types: intrinsic, boron-doped, phosphorous-doped, and carbon alloyed with and without boron doping. Raman studies reveal that the annealed films prepared from the boron or phosphorous doped a-Si:H have high carrier activation and display the interference lineshape (Breit-Wigner-Fano) of the discrete phonons (Si-Si and Si-B modes) interacting with the continuum of the single particle electronic Raman scattering. The Raman lineshapes indicate concentrations of ∼1 × 1021 cm3. This is confirmed by dark conductivities exceeding 100 S/cm in the annealed boron-doped and phosphorous-doped layers.

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Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H

  • M. E. Savage (a1), U. JaYamaha (a1), A. Compaan (a1), A. Aydinli (a2) and Dashen Shen (a3)...

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