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Raman Studies of GaNP Alloy

Published online by Cambridge University Press:  21 March 2011

I. A. Buyanova ,
W. M. Chen ,
E. M. Goldys ,
H. P. Xin  and
C. W. Tu
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
E. M. Goldys
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
H. P. Xin
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
C. W. Tu
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
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Abstract

Raman scattering (RS) spectroscopy is employed to characterize the effect of nitrogen on structural properties of GaNxP1-x alloy with nitrogen composition up to 3 %. Two-mode behavior of the alloy is clearly shown. The frequency of the GaP-like LO phonons is found to decrease with N composition as –1.13 cm-1x. This dependence is proposed to be largely due to the biaxial strain in the GaNP epilayers, as a result of lattice mismatch to the GaP substrate. The frequency of the GaN-like phonons is found to be more sensitive to nitrogen content, increasing with the rate of +2.6 cm-1x. The addition of nitrogen is also found to cause a dramatic quenching of the two-phonon Raman scattering and an appearance of the zone edge GaP-like vibrations. These effects are suggested to reflect local distortion in the GaNP lattice induced by nitrogen, as well as possible clustering of N atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I5.4.1
Copyright
Copyright © Materials Research Society 2002

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