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Raman Studies of a-Si:H/a-SiNx and a-Si/a-SiNx Superlattices

  • I. Honma (a1), T. Tanaka (a1), H. Komiyama (a1) and K. Tanaka (a2)

Abstract

First observation is reported of the deposition rate dependence of Raman-detected structural disorder in a-Si:H/a-SiNx semiconductor superlattices as well as a-Si/a-SiNx ones. FWHM of TO-like Raman peak of a-Si:H in the multilayer structure rapidly decreases as deposition rate decreases, while that of a- Si decreases more slowly. The results demonstrate that the structural disorder of a-Si:H/a-SiNx decreases as time to grow a monolayer (TGM) increases in a time range of a second, and also suggest that hydrogen covering the growing surface enhances the structural-relaxation velocity of disordered amorphous network.

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