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Raman Scattering Study of Boron Doped Diamond Synthesized at High Pressure

Published online by Cambridge University Press:  28 February 2011

Hiromu Shiomi ,
Dimitry Kirillov  and
Stig B. Hagstrom
Hiromu Shiomi
Affiliation:
Department of Materials Science & Engineering and Center for Materials Research, Stanford University, Stanford, CA 94305
Dimitry Kirillov
Affiliation:
Department of Materials Science & Engineering and Center for Materials Research, Stanford University, Stanford, CA 94305
Stig B. Hagstrom
Affiliation:
Department of Materials Science & Engineering and Center for Materials Research, Stanford University, Stanford, CA 94305
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Abstract

Boron doped diamond synthesized at high pressure was studied using Raman scattering. Shift and broadening of the diamond phonon line was observed and attributed to disorder produced by boron doping. Electronic transitions within boron acceptor states and Fano-type interference between phonons and the electronic continuum have also been observed in the spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 897
Copyright
Copyright © Materials Research Society 1993

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