Skip to main content Accessibility help
×
Home

Raman Scattering Characterization of Implanted ZnO

  • Esther Alarcon-Llado (a1), Ramon Cusco (a2), Luis Artus (a3), German Gonzalez-Diaz (a4), Ignacio Martil (a5), Juan Jimenez (a6), Buguo Wang (a7) and Michael Callahan (a8)...

Abstract

In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to high doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.

Copyright

References

Hide All
1. Look, D. C. and Chaflin, B., Phys. Stat. Sol. (b) 241, 624 (2004).
2. Lee, E-C, Kim, Y-S, Jin, Y-G and Chang, K. J., Phys. Rev. B 64, 085120 (2001).
3. Braunstein, G., Muraviev, A., Saxena, H., Dhere, N., Richter, V., and Kalish, R., Appl. Phys. Lett. 87, 192103 (2005).
4. Suscavage, M., Harris, M., Bliss, D., Yip, P., Wang, S. Q., Schwall, D., Bouthillette, L., Bailey, J., Callahan, M., Look, D. C., Reynolds, D. C., Jones, R. L., and Litton, C. W., MRS Internet J. Nitride Semicond. Res. 4S1, G3.40 (1999).
5. Serrano, J., Romero, A. H., Manjón, F. J., Lauck, R., Cardona, M., and Rubio, A., Phys. Rev. B 69, 094306 (2004).
6. Reuss, F., Kirchner, C., Gruber, Th., Kling, R., Maschek, S., Limmer, W., Waag, A., and Ziemann, P., J. Appl. Phys. 95, 3385 (2004).
7. Kaschner, A., Haboek, U., Strassburg, M., Strassburg, M., Kaczmarczyk, G., Zeuner, Z., Alves, H. R., Hoffmann, D. M., and Meyer, B. K., Appl. Phys. Lett. 80, 1909 (2002).
8. Bundesmann, C., Ashkenov, N., Schubert, M., Spemann, D., Butz, T., Kaidashev, E. M., Lorentz, M., and Grundmann, M., Appl. Phys. Lett. 83, 1974 (2003).
9. Wang, J. B., Zhong, H. M., Li, Z. F., and Lu, W., Appl. Phys. Lett. 88, 101913 (2006).
10. Pastor, D., Ibáñez, J., Cuscó, R., Artús, L., González-Díaz, G., and Calleja, E., Semicond. Sci. Technol. 22, 70 (2007).
11. Yu, J., Xing, H, Zhao, Q., Mao, H., Shen, Y., Wang, J., Lai, Z., Zhu, Z., Solid State Commun. 138, 502 (2006).

Keywords

Raman Scattering Characterization of Implanted ZnO

  • Esther Alarcon-Llado (a1), Ramon Cusco (a2), Luis Artus (a3), German Gonzalez-Diaz (a4), Ignacio Martil (a5), Juan Jimenez (a6), Buguo Wang (a7) and Michael Callahan (a8)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed