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Raman Scattering by Lo Pronon-Plasmon Coupled Mode in Heavily Carbon Doped P-Type InGsAs

Published online by Cambridge University Press:  22 February 2011

Ming Qi ,
Jinsheng Luo ,
Junichi Shirakashi ,
Eisuke Tokumitsu ,
Shinji Nozaki ,
Makoto Konagai  and
Kiyoshi Takahashi
Ming Qi
Affiliation:
Xi'an Jiaotong University, Dept. of Electronic Engineering, Xi'an 710049, China
Jinsheng Luo
Affiliation:
Xi'an Jiaotong University, Dept. of Electronic Engineering, Xi'an 710049, China
Junichi Shirakashi
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Tokyo 152, Japan
Eisuke Tokumitsu
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Tokyo 152, Japan
Shinji Nozaki
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Tokyo 152, Japan
Makoto Konagai
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Tokyo 152, Japan
Kiyoshi Takahashi
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Tokyo 152, Japan
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Abstract

The Raman scattering from LO phonon–plasmon coupled (LOPC) mode in heavily carbon doped p–type InxGa1–xAs grown by metalorganic molecular beam epitaxy (MOMBE) was studied experimentally. Only one LOPC mode appears between the GaAs–like and InAs–like LO modes was observed. The peak position of the LOPC mode is near the GaAs–like TO mode frequency, and is not sensitive to the hole concentration. The intensity of the mode increases with increasing the carrier concentration while the two LO modes decrease and become unvisible under the higher doping level. The hole concentration dependence of the linewidth and intensity of the LOPC mode is very similar to that in p–type GaAs. It was shown that the plasmon damping effect plays a dominant role in the p–type doping case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 229
Copyright
Copyright © Materials Research Society 1994

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