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Raman Scattering as a Temperature Frobe for Laser Heating of Si

Published online by Cambridge University Press:  15 February 2011

Dimitry Kirillov  and
James L. Merz
Dimitry Kirillov
Affiliation:
Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106
James L. Merz
Affiliation:
Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

The frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 95
Copyright
Copyright © Materials Research Society 1983

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References

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