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Raman Scattering as a Temperature Frobe for Laser Heating of Si

  • Dimitry Kirillov (a1) and James L. Merz (a1)

Abstract

The frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.

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