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Raman Analysis of Single Crystalline Bulk Aluminum Nitride: Temperature Dependence of the Phonon Frequencies

Published online by Cambridge University Press:  17 March 2011

Jonathan M. Hayes ,
Martin Kuball ,
Ying Shi  and
James H. Edgar
Jonathan M. Hayes
Affiliation:
University of Bristol, H.H. Wills Laboratory, Bristol BS8 1TL, United Kingdom
Martin Kuball
Affiliation:
University of Bristol, H.H. Wills Laboratory, Bristol BS8 1TL, United Kingdom
Ying Shi
Affiliation:
Kansas State University, Chemical Engineering Department, Manhattan, KS 66506-5102, U.S.A
James H. Edgar
Affiliation:
Kansas State University, Chemical Engineering Department, Manhattan, KS 66506-5102, U.S.A
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Abstract

The frequencies of the E2(high), A1(LO), A1(TO), E1(TO) and E1(LO) phonons of singlecrystalline bulk AlN were measured using micro-Raman spectroscopy over a temperature range from 10K to 1275K. A modeling of the temperature dependence of the AlN phonon frequencies considering the thermal lattice expansion and two-phonon decay mechanisms gave results in good agreement with the experimental data. At temperatures in excess of ∼300K an approximate linear shift of the phonon frequencies with temperature was found. In this high temperature regime, we determined a frequency shift of the E2(high) phonon of (-2.22 ± 0.02) ×10−2cm−1/K, which is very similar to values reported for bulk GaN. This suggests that similar parameters will be suitable for AlxGa1−xN alloys, commonly used in high-power high-frequency electronic devices. The results provide the basis for non-invasive local temperature monitoring in highpower III-nitride devices using micro-Raman scattering techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.38
Copyright
Copyright © Materials Research Society 2001

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References

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