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Radiative recombination processes of thermal donors in silicon

Published online by Cambridge University Press:  21 March 2011

S. Pizzini ,
S. Binetti ,
E. Leoni ,
A. Le Donne ,
M. Acciarri  and
A. Castaldini
S. Pizzini
Affiliation:
INFM and Department of Materials Science, University Milano- Bicocca , Via Cozzi 53, Milano, Italy
S. Binetti
Affiliation:
INFM and Department of Materials Science, University Milano- Bicocca , Via Cozzi 53, Milano, Italy
E. Leoni
Affiliation:
INFM and Department of Materials Science, University Milano- Bicocca , Via Cozzi 53, Milano, Italy
A. Le Donne
Affiliation:
INFM and Department of Materials Science, University Milano- Bicocca , Via Cozzi 53, Milano, Italy
M. Acciarri
Affiliation:
INFM and Department of Materials Science, University Milano- Bicocca , Via Cozzi 53, Milano, Italy
A. Castaldini
Affiliation:
INFM and Department of Physics, University of Bologna, Viale Berti Pichat 6/2, Bologna , Italy
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Abstract

There is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.

In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.

We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.30.1
Copyright
Copyright © Materials Research Society 2002

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