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Radiation Damage Of InGaAs Photodiodes By High Energy Particles

  • T. Kudou (a1), H. Ohyama (a1), E. Simoen (a2), C. Claeys (a2), Y. Takami (a3), K. Shigaki (a1), A. Fujii (a4) and H. Sunaga (a5)...

Abstract

Results are presented of a study on the performance degradation and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

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