Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-30T17:50:39.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Quenched-In Defects in CW Laser-Annealed Si

Published online by Cambridge University Press:  15 February 2011

N.H. Sheng  and
J.L. Merz
N.H. Sheng
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
Get access

Abstract

DLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 313
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gat, A. and Gibbons, J.F., Appl. Phys. Lett. 32, 142 (1978).Google Scholar
2. Mizuta, M., Sheng, N.H., Merz, J.L., Lietoila, A., Gold, R.B. and Gibbons, J.F., Appl. Phys. Lett. 37, 154 (1980).Google Scholar
3. Sheng, N.H., Mizuta, M. and Merz, J.L., Laser and Electron-Beam Solid Interactions and Materials Processing, ed. by Gibbons, J.F., Hess, L.D. and Sigmon, T.W (North Holland, 1981), p. 155.Google Scholar
4. Rozgonyi, G.A., Baumgart, H. and Phillipp, F., ibid., p. 193.Google Scholar
5. Baumgart, H., Hildebrand, O., Phillipp, F. and Rozgonyi, G.A., Proceedings of 2ndOxford Conference on Microscopy of Semiconducting Materials, Oxford, April 6–10, 1981, (Inst. of Physics, London).Google Scholar
6. Sheng, N.H., Mizuta, M. and Merz, J.L., Appl. Phys. Lett., to be published (Dec. 15, 1981).Google Scholar
7. In reference [6] this trap was reported to be at Ev + 0.47 eV. Subsequent measurements reported here indicate that it is Ev + 0.45 ± 0.02 eV.Google Scholar
8. Lang, D.V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
9. Johnson, N.M., Bartelink, D.J., Moyer, M.D., Gibbons, J.F., Lietoila, A., Ratnakumar, K.N. and Regolini, J.L., Laser and Electron Beam Processing of Materials, ed. by White, C.W. and Peercy, P.S. (Academic Press; New York, 1979), p. 423.Google Scholar
10. Lee, Y.H., Kleinhenz, R.L. and Corbett, J.W., Appl. Phys. Lett. 31, 142 (1977).Google Scholar
11. Gerson, J.D., Cheng, L.J. and Corbett, J.W., J. Appl. Phys. 48, 4821 (1977).Google Scholar
12. Ludwig, G.W. and Woodbury, H.H., Solid State Physics 13, 223 (1962).CrossRefGoogle Scholar
13. Graff, K. and Pieper, H., J. Electrochem. Soc. 128, 669 (1981).Google Scholar
14. Kimerling, L.C., Benton, J.L. and Rubin, J.J., Defects in Semiconductors 1980 (Inst. of Physics, London 1981).Google Scholar
15. Kimerling, L.C., Defects in Semiconductors, ed. by Narayan, J. and Yan, T.Y. (North-Holland, 1981), p. 85.Google Scholar