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Quaternary Phase Equilibria vs. Strain-Energy at the In.53Ga.47As/InP Interface

Published online by Cambridge University Press:  28 February 2011

Allan E. Schultz  and
Y. Austin Chang
Allan E. Schultz
Affiliation:
Honeywell/SSEC, 12001 Hwy. 55, Plymouth, MN 55441
Y. Austin Chang
Affiliation:
Y. Austin Chang, University of Wisconsin-Madison, Dept. of Materials Science and Engineering, 1509 University Av., Madison, WI 53706
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Abstract

Extensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 377
Copyright
Copyright © Materials Research Society 1989

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