Skip to main content Accessibility help
×
Home

Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN

  • Shukun Duan (a1) and Dacheng Lu (a2)

Abstract

A thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 has been calculated. The phase diagram is consists of four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga(l), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of carrier gas, deposition ratio of NH3 and V/III ratio upon growth of GaN using MOVPE has been studied.

Copyright

References

Hide All
1. Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, p. 1687 (1994).
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996); Jpn. J. Appl. Phys. 35, p. L217 (1996).
3. Stringfellow, G. B., J. Cryst. Growth, 70, p. 33 (1984).
4. Lu, D. -C., Liu, X., Wang, D. and Lin, L., J. Cryst. Growth, 124, pp. 383388 (1992).
5. Duan, Shu-kun and Lu, Da-Cheng, Proc. of the 1st Symp. on Blue Laser and Light Emitting Diodes, p. 332 (1996); J. Crystal Growth, 170, p. 514–517 (1997).
6. Lee, P. W., Omstead, T. R., Mckenna, D. R. and Jensen, K. F., J. Cryst. Growth, 85, p. 165 (1987).
7. Cherng, M. J., Jen, H. R., Larsen, C. A. and Stringfellow, G.B., J. Cryst. Growth, 77, p. 408 (1986).
8. Tietjen, J.J., and Solid State Technology, 15, p. 42 (1972)
9. Honing, R. E and Kramer, D.A., RCA Rev. 30, p. 285 (1996).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed