Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-22T22:31:24.139Z Has data issue: false hasContentIssue false
  • English
  • Français

Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode

Published online by Cambridge University Press:  01 February 2011

Yoshishige Tsuchiya ,
Takuya Nakatsukasa ,
Hiroshi Mizuta ,
Shunri Oda ,
Akira Kojima  and
Nobuyoshi Koshida
Yoshishige Tsuchiya
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan.
Takuya Nakatsukasa
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan.
Hiroshi Mizuta
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan.
Shunri Oda
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan.
Akira Kojima
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2–24–16, Naka-cho, Koganei-shi, Tokyo 184–8588, Japan
Nobuyoshi Koshida
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2–24–16, Naka-cho, Koganei-shi, Tokyo 184–8588, Japan
Get access

Abstract

Mechanism of electron transport through planerized nanocrystalline-Si (nc-Si) cold cathode surface emitting devices was investigated. The energy distribution of electrons emitted from nc-Si emitter was obviously not Maxwellian, which was usually obtained at conventional cold cathode devices, but was similar to that from the nanocrystalline porous silicon diode emitter. These results strongly suggest that electrons are emitted quasiballistically from our devices and indicate that the planarized nc-Si layer play an important role in this high efficiency cold cathode emitter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F8.8
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
2. Dutta, A., Oda, S., Fu, Y., and Willander, M., Jpn. J. Appl. Phys., Part 1 39, 4647 (2000).Google Scholar
3. Khalafalla, M. A. H., Durrani, Z. A. K., and Mizuta, H., Appl. Phys. Lett. 85, 2262 (2004).Google Scholar
4. Oda, S., Mat. Sci. Eng. B 101, 19 (2003).Google Scholar
5. Koshida, N., Sheng, X., and Komoda, T., Appl. Surf. Sci. 146, 371 (1999).Google Scholar
6. Nakajima, Y., Kojima, A., and Koshida, N., Appl. Phys. Lett. 81, 2472 (2002).Google Scholar
7. Nishiguchi, K., Chao, X., and Oda, S., Mat. Res. Soc. Symp. Proc. 638, F5.9.1 (2001).Google Scholar
8. Nishiguchi, K., Chao, X., and Oda, S., J. Appl. Phys. 92, 2748 (2002).Google Scholar
9. Komoda, T., Sheng, X., and Koshida, N., J. Vac. Sci. Technol. B 17, (1999) 1076.Google Scholar
10. Ifuku, T., Otobe, M., Itoh, A., and Oda, S., Jpn. J. Appl. Phys. 36, 4031 (1997).Google Scholar
11. Bronson, S. D., DiMaria, D. J., Fischetti, M. V., Pesavento, F. L., Solomon, P. M., and Dong, D. W., J. Appl. Phys. 58, 1302 (1985).Google Scholar
12. Ichihara, T., Baba, T., Komoda, T., and Koshida, N., J. Vac. Sci. Technol. B 22, (2004) 1372.Google Scholar
13. Uno, S., Nakazato, K., Yamaguchi, S., Kojima, A., Koshida, N., and Mizuta, H., IEEE Trans. Nanotechnology 2, (2003) 301.Google Scholar