Skip to main content Accessibility help

A Quasi-2d Model for Reverse Short Channel Effect

  • Huilong Zhu (a1)


A new physically-based model for reverse short channel effects has been developed. This kinetic model considers three species: neutral interstitial, immobile dopant and mobile interstitial-dopant pairs. To consider ion-implantation damage and stress effects on the Si/SiO2 interface, a non-uniform sink strength at the Si/SiO2 interface for interstitials has been assumed. ALAMODE, a PDE solver, was used to solve the model. Lateral boron distributions of NMOS devices in the channel near the Si/SiO2 interface have been simulated. Significant boron pile-up was found at the gate edges which is in quantitative agreement with the doping profiles extracted from experimental C-V data. The mechanism of the B diffusion in the channel region is discussed.



Hide All
[1] Orlowski, M., Mazure, C. and Lau, F., IEDM Technical Digest (1987) p. 632–63
[2] Hanafi, H.I., Noble, W.P., Bass, R.S., Varahramyan, K., Lii, Y., and Daily, A.J., IEEE Electron Device Lett., 14 p.575577 (1993).
[3] Jacobs, H., Schwerin, A.V., Scharfetter, D. and Lau, F., IEDM Technical Digest (1993) p. 307310
[4] Rafferty, C.S., Vuong, H.H, Eshraghi, S.A., Giles, M.D., Pinto, M.R., Hillenius, S.J., IEDM Technical Digest (1993) p.311314
[5] Packan, P., Ph.D. dissertation, Stanford University, 1990
[6] Giles, M.D., J. Electrochem. Soc. 138 (4) 1160 (1991)
[7] Zhu, J., dela Rubia, T. Diaz, Yang, L.H., Mailhiot, C., and Gilmer, G.H., Phys. Rev. B 54 4741 (1996)
[8] Tang, M., Colombo, L., Zhu, J., and dela Rubia, T. Diaz, Phys. Rev. B 55 14279 (1997)
[9] Zhu, H., Oldiges, P. and Khalil, N., submitted to J. Electrochem. Soc.
[10] Yergeau, D.W. and Dutton, R.W., ALAMODE User Guide, Stanford University, August 11, 1997
[11] Agarwal, A.M. and Dunham, S.T., J. Appl. Phys. 78 5313 (1995)
[12] Aziz, M.J., Materials Research Society Symposia Proceedings, 469 (1997) pp.3745
[13] Kosevich, A.M., Dislocations in Solids, ed. by Nabarro, F.R.N., (North-Holland Publishing Co., 1979) p.50
[14] Senez, V., Ferreira, P., and Baccus, B., IEEE Trans. Electron Dev. 43 (5) 720 (1996)
[15] Khalil, N., Faricelli, J., Huang, C.L. and Selberherr, S., J. Vac. Sci. Technol. B 14 224 (1996)
[16] Khalil, N. and Faricelli, J., SISPAD 1996, p. 1922
[17] Chung, S.S., Cheng, S.M., Lee, G.H. and Guo, J.C., 1995 Symposium on VLSI Technology Digest of Technical Papers, p.103
[18] Chaudhry, S., Rafferty, C.S., Nagy, W.J., Chyan, Y.F., Carroll, M.S., Chen, A.S., and Lee, K.H. IEDM Technical Digest (1997) p. 679682

A Quasi-2d Model for Reverse Short Channel Effect

  • Huilong Zhu (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed