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A Quasi-2d Model for Reverse Short Channel Effect

  • Huilong Zhu (a1)

Abstract

A new physically-based model for reverse short channel effects has been developed. This kinetic model considers three species: neutral interstitial, immobile dopant and mobile interstitial-dopant pairs. To consider ion-implantation damage and stress effects on the Si/SiO2 interface, a non-uniform sink strength at the Si/SiO2 interface for interstitials has been assumed. ALAMODE, a PDE solver, was used to solve the model. Lateral boron distributions of NMOS devices in the channel near the Si/SiO2 interface have been simulated. Significant boron pile-up was found at the gate edges which is in quantitative agreement with the doping profiles extracted from experimental C-V data. The mechanism of the B diffusion in the channel region is discussed.

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A Quasi-2d Model for Reverse Short Channel Effect

  • Huilong Zhu (a1)

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