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Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

  • I. E. Tyschenko (a1), G. A. Kachurin (a1), K. S. Zhuravlev (a1), N. A. Pazdnikov (a1), V. A. Volodin (a1), A. K. Gutakovsky (a1), A. F. Leier (a1), H. Fröb (a2), K. Leo (a2), T. Böime (a2), L. Rebohle (a3), R. A. Yankov (a3) and W. Skorupa (a3)...

Abstract

Strong blue, red and near-infrared photoluminescence has been observed from Si+-implanted and pulse-annealed SiO2 layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO2 matrix and the photoluminescence. Structural transformations in the Si-rich SiO2 layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystalline Si nanoinclusions and quantum-confined Si nanocrystals, respectively.

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Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

  • I. E. Tyschenko (a1), G. A. Kachurin (a1), K. S. Zhuravlev (a1), N. A. Pazdnikov (a1), V. A. Volodin (a1), A. K. Gutakovsky (a1), A. F. Leier (a1), H. Fröb (a2), K. Leo (a2), T. Böime (a2), L. Rebohle (a3), R. A. Yankov (a3) and W. Skorupa (a3)...

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