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Quantum-kinetic Theory of Defect-mediated Recombination in Nanostructure-based Photovoltaic Devices

Published online by Cambridge University Press:  25 February 2013

Urs Aeberhard
Urs Aeberhard*
Affiliation:
IEK-5: Photovoltaik, Forschungszentrum Juelich, 52425Juelich, Germany
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Abstract

In this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states.

Keywords

defectsphotovoltaicsimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 91 - 96
Copyright
Copyright © Materials Research Society 2013 

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References

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