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Quantum-Confined Stark Effect in II-VI Semiconductor Coupled Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Z. Yang  and
J. F. Schetzina
Z. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

The Quantum-Confined Stark Effect in II-VI semiconductor coupled quantum wells is studied theoretically. It is found that because of the difference in localization of the wavefunctions of the heavy hole and the electron subbands involved, large band gap shifts can be induced by an external electric field for quantum wells with zero-field band gaps in the spectrum region from 0.4 µm to 12 µm. Several potential device applications based on this effect are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 419
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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