Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T07:24:14.124Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum Confinement in Single Layer a-Si:H Films

Published online by Cambridge University Press:  10 February 2011

S. A. Koehler  and
H. Fritzsche
S. A. Koehler
Affiliation:
James Franck Institute, Department of Physics, University of Chicago, Chicago IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, Department of Physics, University of Chicago, Chicago IL 60637
Get access

Abstract

Quantum confinement effects in the transmission spectrum of thin amorphous silicon, a-Si:H, films require a coherence length comparable to the film thickness, as well as good film homogeneity. After a careful investigation, we conclude that there is no quantum confinement in single layer a-Si:H films at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 741
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tiedje, T., Abeles, B., Persans, P. D., Brooks, B. and Cody, G., J. of Non-Cryst. Sol. 66, 345 (1984)Google Scholar
2 Beaudoin, M., Meunier, M. and Arsenault, C. J., Phys. Rev. Lett. 47, 2197, (1993)Google Scholar
3 Miyazaki, S., Ihara, Y. and Hirose, M., Phys. Rev. Lett. 59, 125 (1987)Google Scholar
4 Hattori, K., Mori, T., Okamoto, H. and Hamakawa, Y., Phys. Rev. Lett. 60, 825 (1988)Google Scholar
5 Hattori, K., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 114, 687 (1989)Google Scholar
6 Hattori, K., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 141, 216 (1992)Google Scholar
7 Hattori, K., Tsujishita, M., Okamoto, H. and Hamakawa, Y., App. Phys. Lett. 55, 763 (1989)Google Scholar
8 Hattori, K., Mori, T., Okamoto, H. and Hamakawa, Y., App. Phys. Lett. 53, 2170 (1988)Google Scholar
9 Chen, K., Xu, J., Jiang, J., Li, Z. and Du, J., Chinese Phys. Lett. 8, 432 (1988)Google Scholar
10 Li, Y. M., An, I., Nguyen, H. V., Wronski, C. and Collins, R., Phys. Rev. Lett. 68, 2814 ( 1992)Google Scholar
11 Deng, X-.M., Fritzsche, H. and Johanson, R., J. of Non-Cryst. Sol. 114, 684 (1989)Google Scholar
12 Wang, Shu-Lin, Cheng, Ru-Guang and Fritzsche, H., Phil. Mag. Lett. 57, 241 (1988)Google Scholar
13 Collins, R. W. and Yang, B. - Y., J. Vac Sci. Technol. B 7, 1155 (1989)Google Scholar
14 Toyoshima, y., Arai, K., Mastsuda, A. and Tanaka, K., Appl. Phys. Lett. 56, 1540 (1990)Google Scholar
15 Hattori, K., Mori, T., Okamoto, H. and Hamakawa, Y., App. Phys. Lett. 53, 2172 (1988)Google Scholar
16 Collins, R. W. and Huang, C. -Y., Phys. Rev. B 34, 2910 (1986)Google Scholar
17 Beaudoin, M., Arsenault, C. J. and Meunier, M. J of Non-Cryst. Sol. 137&138, 1099 (1991)Google Scholar
18 Beaudoin, M., Meunier, M. and Arsenault, C. J., Phys. Rev. B 47, 2197 (1993)Google Scholar
19 Lockwood, D. J., Lu, Z. H. and Baribeau, J. -M., Phys. Rev. Lett. 76, 539 (1996)Google Scholar
20 Ross, R. C. and Jaklik, J. Jr., Appl. Phys. 55, 3785 (1984)Google Scholar