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Quantitative High Resolution Electron Microscopy of Grain Boundaries

Published online by Cambridge University Press:  10 February 2011

Geoffrey H. Campbell ,
Wayne E. King ,
Dov Cohen  and
Barry Carter
Geoffrey H. Campbell
Affiliation:
University of California, Lawrence Livermore National Laboratory. Chemistry and Materials Science Directorate, P.O. Box 808. Livermore. CA 94550
Wayne E. King
Affiliation:
University of California, Lawrence Livermore National Laboratory. Chemistry and Materials Science Directorate, P.O. Box 808. Livermore. CA 94550
Dov Cohen
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN. 55455
Barry Carter
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN. 55455
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Abstract

The Σ11 (113)/[110] symmetric tilt grain boundary has been characterized by high resolution transmission electron microscopy. The method by which the images are prepared for analysis is described. The statistics of the image data have been found to follow a normal distribution. The electron-optical imaging parameters used to acquire the image have been determined by non-linear least-square image simulation optimization within the perfect crystal region of the micrograph. A similar image simulation optimization procedure is used to determine the atom positions which provide the best match between the experimental image and the image simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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References

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