Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T02:08:58.762Z Has data issue: false hasContentIssue false
  • English
  • Français

Pyrometric Emissivity Measurements and Compensation in an RTP Chamber

Published online by Cambridge University Press:  25 February 2011

J. Nulman ,
B. Cohen ,
W. Blonigan ,
S. Antonio ,
R. Meinecke  and
A. Gat
W. Blonigan
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
S. Antonio
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
R. Meinecke
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
A. Gat
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
Get access

Abstract

The emissivity effects and compensation schemes encountered in pyrometric temperature measurements in RTP systems are described in this paper. The emissivity effects include substrate roughness, layered films, substrate temperature, and chamber reflectivity. Compensation techniques are derived based on the emissivity effects, and include reference thermocouples and reflectance-based measurements. Compensated emissivity results in wafer-to-wafer temperature variations of less than ± 6 C, compared to as much as ± 100 C for uncompensated emissivity. A new model for emissivity analysis at temperatures larger than 700 C is also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 461
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Snell, J.F., in Handhook of Optics, edited by Driscoll, W.G. and Vaughan, W., (McGraw-Hill, New York, 1978), pp. 1–27.Google Scholar
2. Sato, T., Japan J. of Appl. Phys., 6 (3), 339 (1967).CrossRefGoogle Scholar
3. Pettibone, D., Suarez, J.R. and Gat, A. in Rapid Thermal Processing, edited by Sedgwick, T.O., Seidel, T.E. and Tsaur, B.-Y. (Mater. Res. Soc. Proc. 52, Pittsburgh, PA 1986), pp. 209–216.Google Scholar
4. Hill, C. and Jones, S. in Reduced Thermal Processing for ULSI, edited by Levy, R.A. (NATO/ASI, Plennum Publishing Co., 1989) in press.Google Scholar
5. McMahon, H.O., J. Opt. Soc. Amer., 40, 376 (1950).CrossRefGoogle Scholar
6. Nulman, J., Bacile, N. and Blonigan, W., Patent filed in the U.S. Patents and Trade Marks Office, file No. 186,558, 1988Google Scholar
7. Pecot, M. and Nulman, J., Patent filed in the U.S. Patents and Trade MArks Office, file No. 114,542, 1987.Google Scholar
8. Nulman, J., Antonio, S., and Blonigan, W., Appl. Phys. Lett., Submitted April 1989.Google Scholar
9. Nulman, J., Cohen, B., J. Appl. Phys., Submitted April 1989.Google Scholar
10. Thomson, T., Westerberg, G., Patent filed in the U.S. Patents and Trade marks Office, file No. 186, 556, 1988.Google Scholar