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Pyrolytic Preparation of Gallium Nitride From [Ga(NEt2)3]2 and its Ammonolysis Compound

Published online by Cambridge University Press:  10 February 2011

Seiichi Koyama ,
Yoshiyuki Sugahara  and
Kazuyuki Kuroda
Seiichi Koyama
Affiliation:
Department of Applied Chemistry, School of Science and Engineering, Waseda University, Ohkubo-3, Shinjuku-ku, Tokyo 169, JAPAN
Yoshiyuki Sugahara
Affiliation:
Department of Applied Chemistry, School of Science and Engineering, Waseda University, Ohkubo-3, Shinjuku-ku, Tokyo 169, JAPAN
Kazuyuki Kuroda
Affiliation:
Department of Applied Chemistry, School of Science and Engineering, Waseda University, Ohkubo-3, Shinjuku-ku, Tokyo 169, JAPAN Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, Nishiwaseda-2, Shinjuku-ku, Tokyo 169 JAPAN
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Abstract

Gallium nitride (GaN) was prepared by the pyrolytic conversion of both [Ga(NEt2)3]2 and its ammonolysis product at 600 °C for 4 h under Ar. The pyrolyzed residues were analyzed by X-ray powder diffraction and scanning electron microscopy, and the pyrolysis processes of the precursors under He were investigated by thermogravimetry-mass spectrometry. The XRD pattern of the pyrolyzed residue of [Ga(NEt2)3]2 showed well-resolved peaks due to a mixture of cubic and hexagonal close-packed layers of GaN. The broad XRD pattern of the pyrolyzed residue of the ammonolysis product was also attributed to the mixture of cubic and hexagonal close-packed layers of GaN. For the pyrolysis of [Ga(NEt2)3]2, the evolution of hydrocarbons was extensively observed at relatively high temperature, but a large amount of carbon (11 mass%) was still detected in the pyrolyzed residue. On the other hand, the amount of carbon was only 1.1 mass% in the pyrolyzed residue of the ammonolysis product. The pyrolysis results of the ammonolysis product under Ar were very similar to those of [Ga(NEt2)3]2 under NH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 93
Copyright
Copyright © Materials Research Society 1997

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