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Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

Published online by Cambridge University Press:  21 March 2011

X.Y. Chen ,
Y.F. Lu ,
Z.M. Ren ,
L. Zhang ,
J.P. Wang  and
T.Y.F. Liew
X.Y. Chen
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
Y.F. Lu
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 email: eleluyf@nus.edu.sg; fax: +65-779-1103
Z.M. Ren
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
L. Zhang
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
J.P. Wang
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
T.Y.F. Liew
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical & Computer Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
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Abstract

Thin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O102.1
Copyright
Copyright © Materials Research Society 2001

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References

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