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Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire

Published online by Cambridge University Press:  10 February 2011

R. D. Vispute ,
V. Talyansky ,
S. Chupoon ,
R. Enck ,
T. Dahmas ,
S. B. Ogale ,
R. P. Sharma ,
T. Venkatesan ,
Y. X. Li  and
L. G. Salamanca-Riba
...Show all authors
R. D. Vispute
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
V. Talyansky
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
S. Chupoon
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
R. Enck
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
T. Dahmas
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
S. B. Ogale
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
R. P. Sharma
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
CSR, Dept. of Physics, University of Maryland, College Park, MD 20742
Y. X. Li
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, Collge Park, AD 20742
L. G. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, Collge Park, AD 20742
A. A. Iliadis
Affiliation:
Department of Electrical Engineering, University of Maryland, Collge Park, MD 20742
M. He
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington DC 20095
X. Tang
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington DC 20095
J. B. Halpern
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington DC 20095
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington DC 20095
M. A. Khan
Affiliation:
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208
K. A. Jones
Affiliation:
US. Army Research Laboratory, Adelphi, AD 20783
V. Bel'kov
Affiliation:
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
V. Botnaryuk
Affiliation:
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
I. Diakonu
Affiliation:
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
L. Fedorov
Affiliation:
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
Y. Zhilyaev
Affiliation:
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
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Abstract

We report high quality epitaxial growth of GaN film by pulsed laser deposition technique. In this method, a KrF pulsed excimer laser was used for ablation of a polycrystalline, stoichiometric GaN target. The ablated material was deposited on a substrate kept at a distance of ∼ 7 cm from the target surface and in an NH3 background pressure of 10−5 Torr and temperature of 750°C. The films (∼0.5 μm thick) grown on AIN buffered sapphire showed a x-ray diffraction rocking curve FWHM of 4–6 arc minutes. The ion channeling minimum yield in the surface region was ∼3% indicating a high degree of crystallinity. The optical band gap was found to be 3.4 eV. The epitaxial films were shiny, and the surface RMS roughness was ∼ 5–15 nm. The electrical resistivity of these films was in the range of 10−2–102 Ω-cm with a mobility in excess of 60 cm2V-1s−1 and carrier concentration of 1017–1019cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 343
Copyright
Copyright © Materials Research Society 1998

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