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Pulsed Laser Deposition of High Quality ZnO Thin Films

Published online by Cambridge University Press:  01 January 1992

S. Amirhaghi ,
V. Craciun ,
F. Beech ,
M. Vickers ,
S. Tarling ,
P. Barnes  and
I. W. Boyd
S. Amirhaghi
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
V. Craciun
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
F. Beech
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
M. Vickers
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
S. Tarling
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
P. Barnes
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
I. W. Boyd
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
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Abstract

Thin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 489
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Yamamoto, T., Shiosaki, T. and Kawabata, A., J. Appl. Phys. 51, 3113 (1980).Google Scholar
2. Yamazaki, O., Mitsuyu, T. and Wasa, K., IEEE Trans. SU–27, 369 (1980).Google Scholar
3. Wenas, W.W., Yamada, A., Takahashi, K., Yoshino, M. and Konagai, M., J. Appl. Phys. 70, 7119 (1991).Google Scholar
4. Shimuzu, M., Monma, A., Shiosaki, T. and Kawabata, A., J. Cryst. Growth 94, 895 (1989).Google Scholar
5. Pizzini, S., Butta, N., Narducci, D. and Palladino, M., J. Electrochem. Soc. 136, 1945 (1989).Google Scholar
6. Howson, R. P., Hall, G. W., Critchlow, G. W. and Sykes, D. E., Vacuum 43, 167 (1992).Google Scholar
7. Hu, J. and Gordon, R. G., J. Electrochem. Soc. 139, 2014 (1992).Google Scholar
8. Goyal, D., Solanki, P., Marathe, B., Takwale, M. and Bhide, V., Jpn. J. Appl. Phys. 31, 361 (1991).Google Scholar
9. Smith, H.M. and Turner, A. F., Appl. Optics 4, 147 (1965).Google Scholar
10. Sankur, H. and Cheung, J. T., J. Vac. Sci. Technol. A 1, 1806 (1983).Google Scholar
11. Amirhaghi, S., Archer, A., Taguiang, B., McMinn, R., Barnes, P., Tarling, S. and Boyd, I. W., Appl. Surf. Sci. 54, 205 (1992).Google Scholar
12. Manifacier, J. C., Gasiot, J. and Fillard, J. P., J.Phys E: Sci. Instr. 9, 1002 (1976).Google Scholar
13. Amirhaghi, S., Beech, F., Craciun, V., Sajjadi, A., Vickers, M., Tarling, S., Barnes, P. and Boyd, I. W., Presented at MRS Spring Meeting 1992.Google Scholar
14. Manabe, Y. and Mitsuyu, T., Jap. J. Appl. Phys. 29, 334 (1990).Google Scholar
15. Igasaki, Y. and Saito, H., J. Appl. Phys. 70, 3613 (1991).Google Scholar
16. Kim, J. S., Marzouk, H. A., Reucroft, P. J. and Hamrin, C. E. Jr, Thin Solid Films 217, 133 (1992).Google Scholar
17. Jou, J.-H., Han, M.-Y. and Cheng, D.-J., J. Appl. Phys. 71, 4333 (1992).Google Scholar
18. Minami, T., Sato, H., Imamoto, H. and Takata, S., Jpn. I. Appl. Phys. 31, L257 (1992).Google Scholar
19. Tsuji, N., Komiyama, H. and Tanaka, K., Jap. J. Appl. Phys. 29, 835 (1990).Google Scholar
20. Gosh, S., Sarkar, A., Chaudhuri, S. and Pal, A. K., Vacuum 42, 645 (1991).Google Scholar
21. Valentini, A., Quaranta, F., Rossi, M. and Battaglin, G., J. Vac. Sci. Technol. A9, 286 (1991).Google Scholar
22. Singh, R. K., Bhattacharya, D. and Narayan, J., Appl. Phys. Lett. 57, 2022 (1990).Google Scholar