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Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

  • D.B. Fenner (a1), O. Li (a1), P.W. Morrison (a1), J. Cosgrove (a1), L. Lynds (a1), M.E. Johansson (a1), B.R. Stoner (a2), J.T. Glass (a2), Peirong Xu (a3) and Hong Zhang (a3)...

Abstract

The successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

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Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

  • D.B. Fenner (a1), O. Li (a1), P.W. Morrison (a1), J. Cosgrove (a1), L. Lynds (a1), M.E. Johansson (a1), B.R. Stoner (a2), J.T. Glass (a2), Peirong Xu (a3) and Hong Zhang (a3)...

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