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Pulsed Laser Crystallization of Amorphous Silicon Films: Effects of Substrate Temperature and Laser Shot Density

  • R. I. Johnson (a1), G. B. Anderson (a1), S. E. Ready (a1), D. K. Fork (a1) and J. B. Boyce (a1)...

Abstract

A recent report on pulsed laser crystallization of a-Si thin films concluded that substrate bias temperatures up to 400°C in combination with laser fluences below 500 mJ/cm2 had little effect on grain size and transport properties. The current report describes the effects of substrate bias temperature up to 500°C and laser fluence up to 540 mJ/cm2 on grain size, mobility and Si (111) x-ray peak intensities. Results indicate that substrate bias temperatures above 400°C, in combination with high laser shot densities and large laser beam spot energies (> 500 mJ/cm2), are a factor in Improving these film properties.

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