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Pulsed ESR Study of the Conduction Electron Spin Center in μc-Si:H

Published online by Cambridge University Press:  15 February 2011

Jiang-Huai Zhou ,
Satoshi Yamasaki ,
Junichi Isoya ,
Kazuyuki Ikuta ,
Michio Kondo ,
Akihisa Matsuda  and
Kazunobu Tanaka
Jiang-Huai Zhou
Affiliation:
Joint Research Center for Atom Technology-Angstrom Technology Partnership, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan, zhou@jrcat.or.jp
Satoshi Yamasaki
Affiliation:
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan
Junichi Isoya
Affiliation:
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan University of Library and Information Science, 1–2 Kasuga, Tsukuba Ibaraki 305, Japan
Kazuyuki Ikuta
Affiliation:
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan
Michio Kondo
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
Kazunobu Tanaka
Affiliation:
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

The spin-lattice relaxation times (T1) of conduction electron (CE) and dangling bond (DB) centers in μc-Si:H have been directly measured using the 3-pulse inversion recovery method. For both CE and DB, the inversion recovery curve follows a stretched exponential form. T1 of DB is about twice the T1 of CE, however the temperature dependence of T1 seems to be the same for both CE and DB and can be approximated by T−4 While the DB echo decay is modulated by both 29Si and 1H nuclei, we found no modulation of the CE echo decay by the H nucleus, indicating that CE centers are located in H-depleted phases in μc-Si:H. The modulation results are direct evidence that CE centers are located in the crystalline grains and DB centers in the amorphous phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 821
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Meier, J., Torres, P., Platz, R. et al. in Amorphous Silicon Technology (MRS Spring Meeting, San Francisco, 1996), to be published.Google Scholar
2.Guha, S., Yang, J., Nath, P., and Hack, M., Appl. Phys. Lett. 49, 218 (1986).Google Scholar
3.Finger, F., Malten, C., Hapke, P., Carius, R., Fluckiger, R., and Wagner, H., Philo. Mag. Lett. 70, 247 (1994), and references therein.Google Scholar
4.Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Iizuma, S., Matsumura, M., and Yamamoto, H., Jpn J. Appl. Phys. 19, L305 (1980).Google Scholar
5.Bowman, M. K. and Kevan, L., in Time Domain Electron Spin Resonance, edited by Kevan, L. and Schwartz, R. N. (John Willey & Sons, New York, 1979), p. 67.Google Scholar
6.Isoya, J., Yamasaki, S., Okushi, H., Matsuda, A., and Tanaka, K., Phys. Rev. B 47, 7013 (1993).Google Scholar
7.Kevan, L., in Time Domain Electron Spin Resonance, edited by Kevan, L. and Schwartz, R. N. (John Willey & Sons, New York, 1979), p. 279.Google Scholar
8.Phillips, W. A., Proc. Roy. Soc. Lond. A 319, 565 (1970).Google Scholar
9.Anderson, P. W., Halperin, B. I., and Varrna, C. M., Phil. Mag. 25, 1 (1972).Google Scholar
10.Klemens, P. G., Phys. Rev. 125, 1795 (1962).Google Scholar
11.Durny, R., Yamasaki, S., Isoya, J., Matsuda, A., and Tanaka, K., J. Non-Cryst Solids 164–166, 223 (1993).Google Scholar
12.Tanaka, K. and Hayashi, S., in Glow-Discharge Hydrogenated Amorphous Silicon. edited by Tanaka, K. (KTK Scientific, Tokyo, 1989), p. 39.Google Scholar
13.Muller, J., Malten, C., Finger, F., and Wagner, H., Proc. of the 23rd Intern. Conf. on the Phys. of Semicond., Berlin, July, 1996, to be published.Google Scholar