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Pulse Diffused N+ Layers in GaAs

Published online by Cambridge University Press:  15 February 2011

D. Eirug Davies ,
T.G. Ryan ,
J.P. Lorenzo  and
E. F. Kennedy
D. Eirug Davies
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
T.G. Ryan
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
J.P. Lorenzo
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
E. F. Kennedy
Affiliation:
College of the Holy Cross, Worcester, MA, 1610
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Abstract

Pulse diffusion has been used for doping GaAs n-type to over 1019 cm−3. Surface arsenic loss is avoided through using As2Se3 as the diffusion source. A reduction in electrical activity similar to that reported for pulse annealed implanted layers occurs with any subsequent heat treatment. A resistive region, found at the surface of the profile, can be circumvented through additionally heating the GaAs thermally during the pulse diffusion and reducing the rapidity of the quench.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 247
Copyright
Copyright © Materials Research Society 1981

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References

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