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p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

  • Henriette A. Gatz (a1), Yinghuan Kuang (a1), Marcel A. Verheijen (a1), Jatin K. Rath (a2), Wilhelmus M.M. (Erwin) Kessels (a1) (a3) and Ruud E. I. Schropp (a1) (a3)...

Abstract

Silicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.

20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E 04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

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Keywords

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

  • Henriette A. Gatz (a1), Yinghuan Kuang (a1), Marcel A. Verheijen (a1), Jatin K. Rath (a2), Wilhelmus M.M. (Erwin) Kessels (a1) (a3) and Ruud E. I. Schropp (a1) (a3)...

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