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p-type in ZnO:N by codoping with Cr
Published online by Cambridge University Press: 01 February 2011
Abstract
We report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.
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- Copyright © Materials Research Society 2004
References
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