Skip to main content Accessibility help

P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation

  • M. K. Jin (a1), T. Yasuda (a1), K. Shahzad (a2) and J. L. Merz (a1)


P-type conduction in bulk ZnSe has been achieved using 1×1016 cm−2 nitrogen (N) ionimplantation followed by a high temperature rapid thermal annealing. Room temperature Hall effect measurements of the sample show that the hole concentration is ∼1×1017 cm−3, and the mobility is ∼30 cm2/V-s. Photoluminescence (PL) measurements were performed to study the optical behavior of the samples, and the results show that the ion implantation damage can be partially repaired by thermal annealing at 900°C or higher. Thermal degradation and recovery of the ion-implantation damage were studied as a function of the annealing temperature.



Hide All
[1] Yasuda, T., Mitsuishi, I. and Kukimoto, H., Appl. Phys. Lett. 52, 57 (1988).
[2] Cheng, H., Depuydt, J. M., Potts, J. E. and Smith, T. L., Appl. Phys. Lett. 52, 147 (1988).
[3] Ohki, A., Shibata, N. and Zembutsu, S., Jpn. J. Appl. Phys. 27, L909 (1988).
[4] Akimoto, K., Miyajima, T. and Mori, Y., Jpn. J. Appl. Phys. 28, L528 (1989).
[5] Akimoto, K., Miyajima, T. and Mori, Y., Jpn. J. Appl. Phys. 28, L531 (1989).
[6] Migita, M., Taike, A., Shiiki, M. and Yamamoto, H., J. Cryst. Growth 101, 835 (1990).
[7] Mitsuhashi, H., Yahata, A., Uemoto, T., Kamata, A., Okajima, M., Hirahara, K. and Beppu, T., J. Cryst. Growth 101, 818 (1990).
[8] Park, R. M., Troffer, M. B., Rouleau, C. M., DePuydt, J. M. and Hasse, M. A., Appl. Phys. Lett. 57, 2127 (1990).
[9] Ohkawa, K., Karasawa, T. and Mitsuyu, T., Jpn. J. Appl. Phys. 30, L152 (1991).
[10] Marshall, T. and Cammack, D. A., J. Appl. Phys. 6, 4149 (1991).
[11] Park, Y. S. and Chung, C. H., Appl. Phys. Lett. 18, 99 (1971).
[12] Park, Y. S. and Shin, B. K., J. Appl. Phys. 45, 1444 (1974).
[13] Chung, C. H., Yoon, H. W. and Kang, H. S., Proceedings of the 4th International Conference on Ion Implantation in Semiconductors and Other Materials. Osaka, 1974.
[14] Wu, Z. L., Merz, J. L., Werkhoven, C. J., Fiztpatrick, B. J. and Bhargava, R. N., Appl. Phys. Lett. 40, 345 (1982).
[15] Yasuda, T., Jin, M., Merz, J. L. and Gaines, J., Proceedings of the 178 th Electrochemical Society Meeting State-of-the-Art Program on Compound Semiconductors (SOTAPOCSXIII), Seattle, 1990 (in press).
[16] Olego, D. J., Petruzzello, J., Shahzad, K., Khan, B. and Cammack, D. A. (Private communication).
[17] Merz, J. L., Nassau, K. and Shiever, J. W., Phys. Rev., B, 8, 1444 (1973).
[18] Tews, H., Venghaus, H. and Dean, P.J., Phys. Rev., B, 19, 5178 (1979).
[19] Dean, P. J., Herbert, D. C., Werkhoven, C. J., Fitzpatrick, B. J. and Bhargava, R. N., Phys. Rev. B, 23, 4888 (1981).
[20] Jiang, X. J., Hisamune, T., Nozue, Y. and Goto, T., Phys. Soc. Japan 52, 4008 (1983).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed