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Pt3In7 Ohmic Contacts to n-TYPE GaAs
Published online by Cambridge University Press: 25 February 2011
Abstract
A thermodynamic and kinetic rationale was utilized to select Pt3In7 as an ohmic contact to n-GaAs. This analysis predicted that the contact metallurgy would be very simple and extremely uniform upon annealing. Preliminary electrical results showed that annealing samples at temperatures of 650 °C or higher led to ohmic behavior. A contact resistance of 3.4 × 10-5 Ω-cm2 was found upon annealing an uncapped contact at 750 °C for 15 s.
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- Copyright © Materials Research Society 1992
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