Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-27T06:07:27.990Z Has data issue: false hasContentIssue false
  • English
  • Français

Proton NMR Spin-Lattice Relaxation Time Characterization of a-Si(H) Structure

Published online by Cambridge University Press:  15 February 2011

M. E. Lowry ,
R. G. Barnes ,
D. R. Torgeson  and
F. R. Jeffrey
M. E. Lowry
Affiliation:
Ames Laboratory-USDOE* and Department of Physics, Iowa State University, Ames, Iowa 50011
R. G. Barnes
Affiliation:
Ames Laboratory-USDOE* and Department of Physics, Iowa State University, Ames, Iowa 50011
D. R. Torgeson
Affiliation:
Ames Laboratory-USDOE* and Department of Physics, Iowa State University, Ames, Iowa 50011
Get access

Abstract

NMR data are presented for reactively sputtered amorphous silicon-hydrogen alloys (a-Si(H)). Measured differences in two of the samples are attributed to two distinct morphologies: a mixed phase (monohydride and dihydride) and a purely monohydride composition. Features of the mixed phase morphology have been modeled. Room temperature, 35 MHz spin-lattice relaxation times are presented for a series of monohydride samples prepared with systematically varied sputtering parameters. A correlation of proton T1 with the density of ESR states tentatively is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 3: Symposium – Nuclear and Electron Resonance Spectroscopies Applied to Materials Science , 1980 , 341
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brodsky, M. H. and Title, R. S., Phys. Rev. Lett. 23, 581 (1969).Google Scholar
2. Reimer, J. A., Vaughan, R. W. and Knights, J. C., Phys. Rev. Lett. 44, 193 (1980).Google Scholar
3. Davis, E. A., in Topics in Applied Physics: Amorphous Semiconductors (Springer-Verlag, 1979), p. 48.Google Scholar
4. Lucovsky, G., Nemanich, R. J. and Knights, J. C., Phys. Rev. B 19, 2064 (1979).Google Scholar
5. Jeffrey, F. R., Shanks, H. R. and Danielson, G. C., J. Appl. Phys. 50, 7034 (1979).Google Scholar
6. Abragam, A., The Principles of Nuclear Magnetism (Oxford, 1961).Google Scholar
7. Farrar, T. C. and Becker, E. D., Pulse and Fourier Transform NMR (Academic Press, 1971).Google Scholar
8. Myles, C. W., Ebner, C. and Fedders, P. A., Phys. Rev. B 14, 1 (1976).Google Scholar
9. For the monohydride columns surrounded by dihydride regions in the mixed phase sample, it may have been appropriate to use three components for the fit, i.e., a narrow Lorentzian and wide Gaussain for the monohydride and a wider Gaussian for the dihydride phase. We believed this to be too many parameters to be justified by the S/N of these spectra.Google Scholar
10. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).Google Scholar
11. Lowry, M. E., Jeffrey, F. R., Barnes, R. G. and Torgeson, D. R., to be published in Sol. State Commun.Google Scholar
12. Knights, J. C., Lucovsky, G. and Nemanich, R. J., J. Non-Cryst. Sol. 32, 393 (1979).Google Scholar
13. Carlos, W. E. and Taylor, P. C., Phys. Rev. Lett. 45, 358. (1980).Google Scholar
14. Solomon, I., in pp. 196–207 of Ref. 3.Google Scholar