Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T09:42:36.866Z Has data issue: false hasContentIssue false
  • English
  • Français

Prospects of a-Sige:H Alloys for Solar Cell Application

Published online by Cambridge University Press:  25 February 2011

C.M. Fortmann
C.M. Fortmann*
Affiliation:
University of Delaware, Institute of Energy Conversion, Newark, Delaware 19716
Get access

Abstract

The transport properties of intrinsic a-SiGe films are found to be limited by poor electron mobility. The relationship between electronic transport and composition (Si, Ge and H content) is established. The electron mobility decreases with increasing hydrogen content for a given Ge content. The relation between growth conditions and film composition is developed. Growth conditions that reduce the extent of gas phase polymerization as well as the flux of hydrogen radical to the growth surface yield the best electronic transport. The best a-SiGe:H alloys of 1.3 eV band gap are used to study the effects of band gap grading on solar cell performance. Solar cells analysis is used to determine both hole and electron transport. Cell designs that minimize performance loss due to poor electron mobility are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 27
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yang, J., Ross, R., Glatfelter, T., Mohr, R., Hammond, G., Bernotaitis, C., Chen, E., Burdick, J., Hopson, M., and Guhu, S., in Proc. 20th IEEE Photovoltaic Specialist Conf. pp 241–246 (1988) .Google Scholar
2. Fortmann, C.M., Albright, D.E., Campbell, I.H., and Fauchet, P.M., Mat. Res. Soc. Symp. Proc. Vol. 164, pp 315–320 (1990).Google Scholar
3. Fortmann, C.M. and Tu, J. in Proc. 20th IEEE Photovoltaic Specialist Conf., p. 139, IEEE, NY (1989)Google Scholar
4. Carlson, D.E., IEEE Transactions on Electron Devices, Vol.36, NO 12. (1989).Google Scholar
5. Guha, S., Yang, J., Pawlikiewicz, A., Glatfelter, T., Ross, R., and Ovshinsky, S.R. in Proc. 20th IEEE Photovoltaic Specialist Conf., pp. 79–84, IEEE, NY (1989).Google Scholar
6. Fortmann, C.M., Hegedus, S.S., and Buchanan, W.A., Journal of Non-crystalline Solids 115, pp 21–23 (1989).Google Scholar
7. Mackenzie, K.D., Eggert, J.R., Leopold, D.J., Li, Y.M., Lin, S., and Paul, W. Phys. Rev. B31, p. 2198 (1985).Google Scholar
8. Aljishi, S., Smith, Z E., Chu, V., Kolodzey, J., Slobodin, D., Conde, J.P., Shen, D.S., Wagner, S., AIP Conf. Proc. 157, p. 25, AIP, NY (1987).Google Scholar
9. Brodsky, M.H., Topics in Applied Physics Vol. 36, Amorphous Semiconductors, p.124 Springer-Verlag NY (1985).Google Scholar
10. Zhou, T.X. and Fortmann, C.M., to be published.Google Scholar
11. Paul, W., Amorphous Silicon and Related Materials pp. 63–79 edited by Fritzsche, H., World Scientific, NJ (1988).Google Scholar
12. Fortmann, C.M., Materials Research Society Proceedings Vol. 118, p.691, MRS, Pittsburgh, PA (1988).Google Scholar
13. Paul, W., Paul, D.K., von Roedern, B., Blake, J. and Oguz, S., Phys. Rev. Lett., Vol. 46, No. 15, p l016, (1981).Google Scholar
14. Albright, D.E., Saxena, N., Rocheleau, R., Fortmann, C.M., and Russell, T.W.F., to be published.Google Scholar
15. Albright, D.E., Fortmann, C.M., Russell, T.W.F., Materials Research Society Proceedings Vol. 149, p. 521, MRS, Pittsburgh, PA (1989).Google Scholar
16. Saxena, N., Albright, D.E., Fortmann, C.M., Russell, T.W.F., Fauchet, P.M., Campbell, I. H., Journal of Non-Crystalline Solids - 114, pp 801–803, (1989).Google Scholar
17. Misiakos, K., Lindholm, F.A., J. Appl. Phys. 64,(1), pp. 383–393, (1988).Google Scholar
18. Fortmann, C.M. to be presented at the 21th IEEE Photovoltaic Specialist Conf. (1990).Google Scholar